12/23/2023 0 Comments Double laser from ledge![]() ![]() The MoS 2 nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga 2O 3 can be reused after mechanical exfoliation. ![]() Prototype MoS 2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 10 8 and an averaged room temperature electron mobility of 65 cm 2 V −1 s −1. LDE MoS 2 nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS 2 nanoribbons on β-gallium ( iii) oxide (β-Ga 2O 3) (100) substrates. Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge.
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